双镶嵌结构的形成方法

Method for forming double mosaic structures

Abstract

The invention discloses a method for forming double mosaic structures, and the method comprises the steps: providing a substrate; forming a first dielectric layer on the substrate; forming a first through hole in the first dielectric layer, wherein the bottom of the first through hole is exposed out of the substrate; filling the first through hole with a second dielectric layer, wherein the second dielectric layer covers the first dielectric layer, and the etching selection ratio of the second dielectric layer to the first dielectric layer is greater than or equal to 10: 1; forming a trench in the second dielectric layer, wherein the bottom of the trench enables the second dielectric layer in the first through hole to be exposed; forming a second through hole in the second dielectric layer in the first through hole after the trench is formed, wherein the second through hole is communicated with the trench, and is exposed out of the substrate; and filling the trench and the second through hole with a conductive layer. The double mosaic structures formed through the method can improve the performance of a semiconductor device formed subsequently.
一种双镶嵌结构的形成方法,包括:提供基底;在所述基底上形成第一介质层;在所述第一介质层内形成第一通孔,所述第一通孔的底部露出所述基底;在所述第一通孔内填充满第二介质层,且第二介质层覆盖所述第一介质层,所述第二介质层与所述第一介质层的刻蚀选择比大于或等于10∶1,在所述第二介质层内形成沟槽,所述沟槽底部露出所述第一通孔内的第二介质层;形成沟槽后,在第一通孔内的第二介质层中形成第二通孔,所述第二通孔与所述沟槽相通且露出所述基底;在所述沟槽和第二通孔内填充满导电层。采用本发明的方法形成的双镶嵌结构,能够提高后续形成的半导体器件的性能。

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